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FGL40N150D
IGBT
FGL40N150D
General Description
Fairchild's Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications.
Features
* * * * High speed switching Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A High input impedance Built-in fast recovery diode
Applications
Home appliances, induction heaters, IH JAR, and microwave ovens.
C
G
TO-264
G C E
TC = 25C unless otherwise noted
E
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds
@ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C
FGL40N150D 1500 25 40 20 120 10 100 200 80 -55 to +150 -55 to +150 300
Units V V A A A A A W W C C C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
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Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.625 0.83 25 Units C/W C/W C/W
(c)2002 Fairchild Semiconductor Corporation
FGL40N150D Rev. A1
FGL40N150D
Electrical Characteristics of the IGBT T
Symbol Parameter
C
= 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES ICES IGES Collector-Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 3mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1500 ------3.0 100 V mA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 40mA, VCE = VGE IC = 40A, VGE = 15V 3.5 2.5 5.0 3.5 7.5 4.5 V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---2450 220 75 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 600 V, IC = 40A, RG = 51, VGE = 15V, Resistive Load, TC = 25C VCE = 600 V, IC = 40A, VGE = 15V -------100 350 200 100 110 15 40 200 700 400 300 170 25 60 ns ns ns ns nC nC nC
Electrical Characteristics of DIODE T
Symbol VFM trr Parameter Diode Forward Voltage Diode Reverse Recovery Time
C
= 25C unless otherwise noted
Test Conditions IF = 10A IF = 10A, di/dt = 200A/us
Min. ---
Typ. 1.3 170
Max. 1.8 300
Units V ns
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(c)2002 Fairchild Semiconductor Corporation
FGL40N150D Rev. A1
FGL40N150D
100 Common Emitter 80 T C = 25 C 8V
o
120
20V 15V 10V
100
Common Emitter VGE = 15V TC = 25 C TC = 125 C
o o
Collector Current, IC [A]
8
Collector Current, IC [A]
80
60
60
40
40
20
VGE = 6V
20
0 0 2 4 6
0 0 2 4 6 8 10
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
6 Common Emitter VGE = 15V Collector - Emitter Voltage, VCE [V] 5 IC = 80A
5000 Common Emitter VGE =0V, f=1MHz 4000 Tc=25 C
o
Capacitance [pF]
4
3000
Cies
IC = 40A 3 IC = 20A 2
2000 Coes 1000 Cres
1 25 50 75 100
o
0 125 150 1 10
Case Temperature, TC [ C]
Collector - Emitter Voltage, VCE [V]
Fig 3. Collector to Emitter Saturation Voltage vs. Case Temperature
Fig 4. Typical Capacitance vs. Collector to Emitter Voltage
20 Common Emitter T C = 25 C
o
20 Common Emitter T C = 125 C
0
Collector - Emitter Voltage, V [V] CE
16
Collector - Emitter Voltage, VCE[V]
16
12
12
8 80A 4 40A 20A 4 8 12 16 20
8 80A 4 40A 20A 0 0 4 8 12 16 20
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0 0
Gate - Emitter Voltage, V GE [V]
Gate - Emitter Voltage, V GE [V]
Fig 5. Saturation Voltage vs. VGE
(c)2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
FGL40N150D Rev. A1
FGL40N150D
Common Emitter VGE = 15V, RG = 51 TC = 25 C TC = 125 C
o o
1000
Common Emitter VGE = 15V, RG = 51 TC = 25 C TC = 125 C
o o
Switching Time [ns]
tf
Switching Time [ns]
1000
tr
100 td(on)
td(off) 100
10 10 20 30 40 50 60 70 80 90 10 20 30 40 50 60 70 80 90
Collector Current, IC [A]
Collector Current, IC [A]
Fig 7. Turn-Off Characteristics vs. Collector Current
Fig 8. Turn-On Characteristics vs. Collector Current
Common Emitter VG E = 15V, RG = 51 TC = 25 C 10000 TC = 125 C
o o
Common Emitter VCC = 600V, VGE = 15V IC = 40A TC = 25 C
o
Switching Time [ns]
Switching Loss [J]
1000
TC = 125 C
o
tf
1000
Eoff Eon
100 td(off)
100 10 20 30 40 50 60 70 80 90 10 100
Collector Current, IC [A]
Gate Resistance, RG []
Fig 9. Switching Loss vs. Collector Current
Fig 10. Turn-Off Characteristics vs. Gate Resistance
1000
Common Emitter VCC = 600V, VGE = 15V IC = 40A TC = 25 C
o o
10000
Common Emitter VCC = 600V, VGE = 15V IC = 40A TC = 25 C
o o
Switching Time [ns]
Switching Loss [J]
TC = 125 C
tr
TC = 125 C
td(on) 100
Eoff
1000 10 www..com 10 100
Eon
10
100
Gate Resistance, RG []
Gate Resistance, RG []
Fig 11. Turn-On Characteristics vs. Gate Resistance
(c)2002 Fairchild Semiconductor Corporation
Fig 12. Switching Loss vs. Gate Resistance
FGL40N150D Rev. A1
FGL40N150D
16 14 Common Emitter R L = 15, V CC = 600V T C = 25 C 12 100s
o
100
Ic MAX (Pulsed) Ic MAX (Continuous) 50s
Gate - Emitter Voltage, VGE [V]
Collector Current, I C [A]
10 1ms DC Operation 1 Single Nonrepetitive 0.1 Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 0.1 1 10 100 1000
o
10 8 6 4 2 0 0 25 50 75 100 125 150
0.01
Gate Charge, Qg [nC]
Collector - Emitter Voltage, VCE [V]
Fig 13. Gate Charge Characteristics
Fig 14. SOA Characteristics
500 450
300 270
Reverse Recovery Time, t rr [ns]
400 350 300 250 200 150 100 50 0 0 50 100 150 200 250 300 IF = 10A
Reverse Recovery Time, t rr [ns]
240 210 180 150 120 90 60 30 0 1 2 3 4 5 6 7 8 9 10 100A/us 200A/us di/dt = 50A/us
di/dt [A/us]
Forward Current, IF [A]
Fig 15. Typical Trr vs. di/dt
Fig 16. Typical Trr vs. Forward Current
1000
100
100
10
T C = 125 100
Instantaneous Forward Current, I F [A]
Reverse Current, I R [uA]
10 TC =125 25 1
1
0.1
25
0.01
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1E-3 300.0 600.0 900.0 1.2k 1.5k
0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Reverse Voltage, V R [V]
Instantaneous Voltage, V F [V]
Fig 17. Reverse Current vs. Reverse Voltage
Fig 18. Typical Forward Voltage Drop vs. Forward Current
FGL40N150D Rev. A1
(c)2002 Fairchild Semiconductor Corporation
FGL40N150D
Package Dimension
TO-264
6.00 0.20
20.00 0.20
(4.00)
(8.30)
(8.30)
(2.00)
(1.00)
(9.00)
(9.00)
(11.00)
(0.50)
20.00 0.20 2.50 0.10
1.50 0.20
(R1
(7.00)
(7.00)
4.90 0.20 (1.50) 2.50 0.20 (1.50) 3.00 0.20 1.00 -0.10
+0.25
(2.00)
20.00 0.50
(R 2.0
o3.3 0 0
.20
.00
0)
)
(1.50)
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.60 -0.10
+0.25
2.80 0.30
5.00 0.20
3.50 0.20
(0.15)
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(1.50)
(2.80)
Dimensions in Millimeters
(c)2002 Fairchild Semiconductor Corporation FGL40N150D Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM
MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM
SLIENT SWITCHER(R) SMART STARTTM SPMTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM
UHCTM UltraFET(R) VCXTM
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed www..com
Full Production
Obsolete
Not In Production
(c)2002 Fairchild Semiconductor Corporation
Rev. H5

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